Even so, this raises switching loss, which can result in bigger heat generation and limit high frequency operation. For off state stress protection by deep p-areas is adopted, for on-state a thick oxide is used in order to bypass the limits to screen remaining extrinsic oxide defects for thin oxides. https://www.facebook.com/permalink.php?story_fbid=pfbid0DiLutbK3L7Y5kHMEMTKXjro5bMS8pBfL6nFaExHXPc3UPsxhKHHbHHQPLS1Vo49nl&id=61562415773754&__cft__[0]=AZU0p5ioGU0P-5RWRZTVa14d9tp72x8Wl-e3BPMTY6p8eh0r2uJhkT9Pu8oDGt1Pcl71kyeUcOwfJxqJPz6hx7-8PIXGowNS0_Qpkw-2KlUiI-P-1l_wKxEKFP07LGrrmPqfO2EqHZYRbq2cGOhaLZZ1vSrdCK9NaMI-MgQ-QeBkrmItpRv7VVPwkXtjdnjQxxZtT1bC9SzNZpHCdFoDNSPe&__tn__=%2CO%2CP-R